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| N-CHANNEL 100V - 0.007 - 135A DPAK/TO-220 LOW GATE CHARGE STripFETTM POWER MOSFET TYPE STB135N10 STP135N10 s s s s STB135N10 STP135N10 TARGET DATA VDSS 100 V 100 V RDS(on) <0.009 <0.009 ID 135 A(*) 135 A(*) TYPICAL RDS(on) = 0.007 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 3 1 2 D2PAK TO-263 (Suffix "T4") TO-220 DESCRIPTION This MOSFET is the result of STMicroelectronics's well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode's reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s PRIMARY SWITCH IN TELECOM DC-DC CONVERTER s HIGH-EFFICIENCY DC-DC CONVERTERS s 42V AUTOMOTIVE APPLICATIONS s SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 20 135 96 540 150 1 TBD TBD -55 to 175 (2) ISD 40A, di/dt 600A/s, VDD BVDSS, T j TJMAX. (3) Starting T j = 25 oC, ID = 40A, VDD = 50V Unit V V V A A A W W/C V/ns mJ C (1) Pulse width limited by safe operating area. (*) Value limited by wire bonding July 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice 1/8 STB135N10 STP135N10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (5) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 67.5 A Min. 2 0.007 Typ. Max. 4 0.009 Unit V DYNAMIC Symbol gfs (5) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 67.5 A Min. Typ. TBD 6350 890 250 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/8 STB135N10 STP135N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 67.5 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 50 V ID= 135 A VGS= 5 V Min. Typ. TBD TBD TBD TBD TBD 95 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 67.5 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. TBD TBD Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (5) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1.5 %. Test Conditions Min. Typ. Max. 135 540 Unit A A V ns C A ISD = 135 A VGS = 0 TBD TBD TBD 1.3 di/dt = 100A/s ISD = 135 A VDD = 25 V Tj = 150C (see test circuit, Figure 5) (1 )Pulse width limited by safe operating area. (5) Pulsed: Pulse duration = 300 s, duty cycle 3/8 STB135N10 STP135N10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STB135N10 STP135N10 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 5/8 STB135N10 STP135N10 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 6/8 STB135N10 STP135N10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 7/8 STB135N10 STP135N10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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